000 03399cam a2200553Ki 4500
001 9781003055723
003 FlBoTFG
005 20220711212444.0
006 m o d
007 cr cnu---unuuu
008 210515s2021 flua ob 0|1 0 eng d
040 _aOCoLC-P
_beng
_erda
_cOCoLC-P
020 _a9781000404937
_qelectronic book
020 _a1000404935
_qelectronic book
020 _a9781003055723
_qelectronic book
020 _a1003055729
_qelectronic book
020 _a9781000404951
_qelectronic book
_qEPUB
020 _a1000404951
_qelectronic book
_qEPUB
020 _z0367519291
020 _z9780367519292
024 8 _a10.1201/9781003055723
_2doi
035 _a(OCoLC)1250512792
035 _a(OCoLC-P)1250512792
050 4 _aTA405
_b.M35 2021
050 4 _aTA417.6
072 7 _aSCI
_x055000
_2bisacsh
072 7 _aTEC
_x007000
_2bisacsh
072 7 _aTEC
_x008010
_2bisacsh
072 7 _aTJF
_2bicssc
082 0 4 _a620.1/123
_223
100 1 _aMaiti, C. K.,
_eauthor.
_915500
245 1 0 _aStress and strain engineering at nanoscale in semiconductor devices /
_cChinmay K. Maiti.
264 1 _aBoca Raton, FL :
_bCRC PRESS,
_c2021.
300 _a1 online resource
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
520 _aAnticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
588 _aOCLC-licensed vendor bibliographic record.
650 0 _aStrains and stresses.
_93640
650 0 _aSemiconductors.
_93077
650 0 _aNanoelectronics.
_94822
650 7 _aSCIENCE / Physics
_2bisacsh
_910678
650 7 _aTECHNOLOGY / Electricity
_2bisacsh
_916699
650 7 _aTECHNOLOGY / Electronics / Circuits / General
_2bisacsh
_912515
856 4 0 _3Taylor & Francis
_uhttps://www.taylorfrancis.com/books/9781003055723
856 4 2 _3OCLC metadata license agreement
_uhttp://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf
942 _cEBK
999 _c71315
_d71315