000			01657cam a2200337Ii 4500
001			9780429068393
008			180331t20152015fluad ob 001 0 eng d
020			_a9780429068393 _q(e-book : PDF)
020			_z9781482232813 _q(hardback)
020			_z9781138034198 _q(paperback)
024	7		_a10.1201/b17812 _2doi
035			_a(OCoLC)897882998
040			_aFlBoTFG _cFlBoTFG _erda
050		4	_aQD921 _b.E73 2015
082	0	4	_a548.5 _bE652
100	1		_aEranna, G., _eauthor. _918547
245	1	0	_aCrystal growth and evaluation of silicon for VLSI and ULSI / _cGolla Eranna.
264		1	_aBoca Raton, FL : _bCRC Press : _bTaylor & Francis Group, _c2015.
264		4	_c©2015
300			_a1 online resource
336			_atext _2rdacontent
337			_acomputer _2rdamedia
338			_aonline resource _2rdacarrier
500			_aA Chapman and Hall book.
505	0		_a1. Introduction -- 2. Silicon : the key material for integrated circuit fabrication technology -- 3. Importance of single crystals for integrated circuit fabrication -- 4. Different techniques for growing single-crystal silicon -- 5. From silicon ingots to silicon wafers -- 6. Evaluation of silicon wafers -- 7. Resistivity and impurity concentration mapping of silicon wafers -- 8. Impurities in silicon wafers -- 9. Defects in silicon wafers -- 10. Silicon wafer preparation for VLSI and ULSI processing -- 11. Packing of silicon wafers.
650		0	_aCrystal growth. _95692
650		0	_aSilicon. _918548
776	0	8	_iPrint version: _z9781482232813 _w(DLC) 2015006228
856	4	0	_uhttps://www.taylorfrancis.com/books/9781482232820 _zClick here to view.
942			_cEBK
999			_c71827 _d71827