000			03132cam a2200313Ii 4500
001			9781315196626
008			180706s2017 si a o b 001 0 eng d
020			_a9781315196626 _q(e-book : PDF)
020			_a9781351767590 _q(e-book: Mobi)
020			_z9789814774093 _q(hardback)
024	7		_a10.1201/9781315196626 _2doi
035			_a(OCoLC)1000430225
050		4	_aTK7881.15 _b.G35 2017
082	0	4	_a621.317 _bG171
245	0	0	_aGallium nitride power devices / _cedited by Hongyu Yu, Tianli Duan.
264		1	_aSingapore : _bPan Stanford Publishing, _c2017.
300			_a1 online resource (x, 298 pages)
504			_aIncludes bibliographical references.
505	0		_achapter 1 The Growth Technology of High-Voltage GaN on Silicon -- chapter 2 The Characteristics of Polarization Effects in GaN Heterostructures -- chapter 3 GaN Transistor Fabrication Process -- chapter 4 Conventional AlGaN/GaN Heterojunction Field-Effect Transistors -- chapter 5 Original Demonstration of Depletion-Mode and Enhancement-Mode AlGaN/GaN Heterojunction Field-Effect Transistors -- chapter 6 Surface Passivation and GaN MIS-HEMTs -- chapter 7 GaN Vertical Power Devices -- chapter 8 Reliability of GaN HEMT Devices -- chapter 9 The Packaging Technologies for GaN HEMTs.
520			_a"GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China.This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China."--Provided by publisher.
650		0	_aPower electronics. _93614
650		0	_aGallium nitride _xElectric properties. _93615
650		0	_aSemiconductors. _93077
700	1		_aDuan, Tianli, _eeditor. _919970
700	1		_aYu, Hongyu, _d1976- _eeditor. _919971
776	0	8	_iPrint version: _z9789814774093
856	4	0	_uhttps://www.taylorfrancis.com/books/9781315196626 _zClick here to view.
942			_cEBK
999			_c72241 _d72241