000 01849cam a2200301Ii 4500
001 9781315216690
008 180331s2013 fluad ob 001 0 eng d
020 _a9781315216690
_q(e-book : PDF)
020 _a9781351823890
_q(e-book: Mobi)
020 _a9781439893753
_q(e-book: PDF)
020 _z9781439893739
_q(hardback)
020 _z9781138077058
_q(paperback)
024 7 _a10.1201/b13005
_2doi
035 _a(OCoLC)822565427
050 4 _aTK7895.M4
_bS53 2013
082 0 4 _a004.53
_bS568
100 1 _aSiddiqi, Muzaffer A.,
_eauthor.
_920003
245 1 0 _aDynamic RAM :
_btechnology advancements /
_cMuzaffer A. Siddiqi.
264 1 _aBoca Raton, Fla. :
_bCRC Press,
_c2013.
300 _a1 online resource (xvii, 364 pages)
505 0 _a1. Random access memories -- 2. DRAM cell development -- 3. DRAM technologies -- 4. Advanced DRAM cell transistors -- 5. Storage capacitor enhancement techniques -- 6. Advanced DRAM technologies -- 7. Leakages in DRAMs -- 8. Memory peripheral circuits.
520 _aDynamic RAM (DRAM) has wide applications in the computer industry, telecommunications, the military, and the space industry. This book presents an up-to-date account of the theory and design of DRAM, the workhorse of all semiconductor memories. It summarizes the development of and recent advances in manufacturing technology, generation by generation. The text also addresses DRAM cell development capacitor enhancement technologies, different types of leakages, and the circuit and technological aspects of the remedial measures taken--
_cProvided by publisher.
650 0 _aSemiconductor storage devices.
_913974
650 0 _aRandom access memory.
_920004
776 0 8 _iPrint version:
_z9781439893739
_w(DLC) 2012030359
856 4 0 _uhttps://www.taylorfrancis.com/books/9781315216690
_zClick here to view.
942 _cEBK
999 _c72253
_d72253