000			02555nmm a2200397Ia 4500
001			00009018
003			WSP
005			20220711214150.0
007			cr |uu|||uu|||
008			190107s2018 si a ob 001 0 eng c
010			_z 2017010454
040			_aWSPC _beng _cWSPC
020			_a9789814571746 _q(ebook)
020			_z9789814571722 _q(hbk.)
020			_z9789814571739 _q(pbk.)
050	0	4	_aTK7871.99.M44 _bL86 2018
072		7	_aTEC _x008010 _2bisacsh
072		7	_aTEC _x009100 _2bisacsh
072		7	_aTEC _x009110 _2bisacsh
082	0	4	_a621.3815/284 _223
100	1		_aLundstrom, Mark S. _920808
245	1	0	_aFundamentals of nanotransistors _h[electronic resource] / _cMark Lundstrom.
260			_aSingapore : _bWorld Scientific Publishing Co. Pte Ltd., _c©2018.
300			_a1 online resource (388 p.) : _bill.
490	0		_aLessons from nanoscience: a lecture notes series ; _vv. 6
538			_aSystem requirements: Adobe Acrobat Reader.
538			_aMode of access: World Wide Web.
588			_aTitle from web page (viewed January 17, 2019).
504			_aIncludes bibliographical references and index.
520			_a"The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits."-- _cPublisher's website.
650		0	_aMetal oxide semiconductor field-effect transistors. _915501
650		0	_aNanostructured materials. _94537
650		0	_aElectronic books. _920809
856	4	0	_uhttps://www.worldscientific.com/worldscibooks/10.1142/9018#t=toc _zAccess to full text is restricted to subscribers.
942			_cEBK
999			_c72642 _d72642