000 12872nam a2202521 i 4500
001 5599322
003 IEEE
005 20220712205744.0
006 m o d
007 cr |n|||||||||
008 151221s2010 njua ob 001 eng d
010 _z 2010006496 (print)
020 _a9780470649336
020 _a047064933X
020 _a9780470649343
_qelectronic
020 _z9781118442166
_qprint
020 _z0470649348
_qelectronic
024 7 _a10.1002/9780470649343
_2doi
035 _a(CaBNVSL)mat05599322
035 _a(IDAMS)0b0000648135491e
040 _aCaBNVSL
_beng
_erda
_cCaBNVSL
_dCaBNVSL
050 4 _aTK7874
_b.F885 2010eb
245 0 0 _aFuture trends in microelectronics :
_bfrom nanophotonics to sensors and energy /
_cedited by Serge Luryi, Jimmy Xu, Alex Zaslavsky.
264 1 _a[Hoboken, New Jersey] :
_bIEEE Press,
_cc2010
264 2 _a[Piscataqay, New Jersey] :
_bIEEE Xplore,
_c[2010]
300 _a1 PDF (xiii, 431 pages) :
_billustrations.
336 _atext
_2rdacontent
337 _aelectronic
_2isbdmedia
338 _aonline resource
_2rdacarrier
504 _aIncludes bibliographical references.
505 0 _aPreface (S. Luryi, J. M. Xu, and A. Zaslavsky) -- 1 OPTOELECTRONICS AND NANOPHOTONICS -- Nanophotonics for Information Systems (Y. Fainman) -- What Will Modern Photonics Contribute to the Development of Future Optical Communication Technology? (Djafar K. Mynbaev) -- Ultrafast Nanophotonic Devices For Optical Interconnects (N. N. Ledentsov) -- Intersubband Quantum-Box Lasers: Progress and Potential as Uncooled Mid-Infrared Sources (D. Botez, G. Tsvid, M. D'Souza, J. C. Shin, Z. Liu, J. H. Park, J. Kirch, L. J. Mawst, M. Rathi, T. F. Kuech, I. Vurgaftman, J. Meyer, J. Plant, G. Turner, and P. Zory) -- GaSb-based Type-I Laser Diodes Operating at 3 �m and Beyond (L. Shterengas, G. Kipshidze, T. Hosoda, and G. Belenky) -- Bridging Optics and Electronics with Quantum Cascade Lasers, Antennas, and Circuits (J. Faist, C. Walther, M. Amanti, G. Scalari, M. Fischer, and M. Beck) -- Towards Intersubband Polaritonics: How Fast Can Light and Electrons Mate? (A. A. Anappara, L. Sorba, A. Tredicucci, G. G�nter, A. Sell, A. Leitenstorfer, R. Huber, S. De Liberato, C. Ciuti, and G. Biasiol) -- Si3N4/SiO2 Planar Photonic Structures Fabricated by Focused Ion Beam (L. A. M. Barea, F. Vallini, D. L. S. Figueira, A. Da Silva Filho, N. C. Frateschi, and A. R. Vaz) -- 2 ELECTRONIC DEVICES AND SYSTEMS -- Silicon-Based Devices and Materials for Nanoscale CMOS and Beyond-CMOS (F. Balestra) -- Device Proposals Beyond Silicon CMOS (P. M. Solomon) -- GeOI as a Platform for Ultimate Devices (W. Van Den Daele, S. Cristoloveanu, E. Augendre, C. Le Royer, J.-F. Damlencourt, D. Kazazis, and A. Zaslavsky) -- Simulation of Self-Heating Effects in Different SOI MOS Architectures (Enrico Sangiorgi, Marco Braccioli and Claudio Fiegna) -- Nanowires: Technology, Physics and Perspectives (D. Gr�tzmacher, Th. Sch�pers, S. Mantl, S. Feste, Q. T. Zhao, H. Hardtdegen, R. Calarco, M. Lepsa, and N. Demarina) -- Emerging Nanotechnology for Integration of Nanostructures in Nanoelectronic Devices (T. Baron, C. Agraffeil, F. Dhalluin, M. Kogelschtaz, G. Cunge, T. Chevolleau, B. Salem, B. Salhi, H. Abed, A. Poti�, L. Latu-Romain, C. Ternon, K. Aissou, L. Mont�s, Mur, G. Molas, B. De Salvo, E. Jalaguier, T. Ernst, P. Ferret, P. Gentile, and N. Pauc).
505 8 _aScrolled Si/SiGe Heterostructures as Building Blocks for Tube-Like Field-Effect Transistors (N. V. Demarina and D. Gr�tzmacher) -- Silicon Nanowire-Based Nonvolatile Memory Cells: Progress and Prospects (Qiliang Li, X. Zhu, Y. Yang, D. E. Ioannou, J. S. Suehle, and C. A. Richter) -- Prospects and Challenges of Next-Generation Flash Memory Devices (Jang-Sik Lee) -- Chalcogenide Glassy Semiconductors - Could They Replace Silicon in Memory Devices? (K. D. Tsendin) -- Current Status and Recent Developments in RSFQ Processor Design (M. Dorojevets) -- 1/f Noise: The Funeral is Cancelled (or Postponed) (M. E. Levinshtein and S. L. Rumyantsev) -- 3 PHYSICS, BIOLOGY, AND OTHER SISTER SCIENCES -- Spin Hall Effect (M. I. Dyakonov) -- Can Biology Provide Creative Solutions for Next-Generation Memory Devices? (W. E. van den Berg and S. A. Kushner) -- Spin Screening of Magnetization Due to Inverse Proximity Effect in Superconducting/Ferromagnetic Bilayers (V. Shelukhin, M. Karpovski, A. Palevski, J. Xia, A. Kapitulnik, and A. Tsukernik) -- Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting (V. Sverdlov, O. Baumgartner, T. Windbacher, and S. Selberherr) -- Graphene-Based Terahertz Devices: Concepts and Characteristics (V. Ryzhii, M. Ryzhii, A. Satou, N. Ryabova, T. Otsuji, V. Mitin, F. T. Vasko, A. A. Dubinov, V. Y. Aleshkin, and M. S. Shur) -- Directed Self-Assembly - A Controllable Route to Optical and Electronic Devices Based on Single Nanostructures (R. L. Williams, D. Dalacu, M. E. Reimer, K. Mnaymneh, V. Sazonova, P. J. Poole, G. C. Aers, R. Cheriton, S. Fr�d�rick, D. Kim, J. Lapointe, P. Hawrylak, and M. KorkusiDski) -- 4 SENSORS, DETECTORS, AND ENERGY -- Three-Dimensional Position-Sensitive Wide Bandgap Semiconductor Gamma-Ray Imaging Detectors (Zhong He) -- Semiconductor Scintillator for Three-Dimensional Array of Radiation Detectors (Serge Luryi and Arsen Subashiev) -- Semiconductor Gamma Radiation Detectors: Band Structure Effects in Energy Resolution (Arsen Subashiev and Serge Luryi).
505 8 _aThe Future of Microelectronics is ... Macroelectronics (M. A. Alam, N. Pimparkar, and B. Ray) -- An Integration Challenge: Information and Communication Technologies to Address Indoor Air Quality in Commercial Buildings (M. D'Iorio) -- Quantum-Dot Infrared Photodetectors: In Search of the Right Design for Room-Temperature Operation (A. Sergeev, V. Mitin, L. H. Chien, and N. Vagidov) -- Treating the Case of Incurable Hysteresis in VO2 (M. Gurvitch, S. Luryi, A. Polyakov, and A. Shabalov) -- Exploratory Studies on Silicon-Based Oxide Fuel Cell Power Sources Incorporating Ultrathin Nanostructured Platinum and Cerium Oxide Films as Anode Components (Bo-Kuai Lai, A. C. Johnson, H. Xiong, C. Ko, and S. Ramanathan) -- Index.
506 1 _aRestricted to subscribers or individual electronic text purchasers.
520 _aIn the summer of 2009, leading professionals from industry, government, and academia gathered for a free-spirited debate on the future trends of microelectronics. This volume represents the summary of their valuable contributions. Providing a cohesive exploration and holistic vision of semiconductor microelectronics, this text answers such questions as: What is the future beyond shrinking silicon devices and the field-effect transistor principle? Are there green pastures beyond the traditional semiconductor technologies? This resource also identifies the direction the field is taking, enabling microelectronics professionals and students to conduct research in an informed, profitable, and forward-looking fashion.
530 _aAlso available in print.
538 _aMode of access: World Wide Web
588 _aDescription based on PDF viewed 12/21/2015.
650 0 _aNanotechnology
_xTechnological innovations.
_927511
650 0 _aDetectors
_xTechnological innovations.
_927512
655 0 _aElectronic books.
_93294
695 _aAbsorption
695 _aAnnealing
695 _aAnodes
695 _aApertures
695 _aArrays
695 _aBiological processes
695 _aBit rate
695 _aBolometers
695 _aBooks
695 _aBuildings
695 _aCMOS integrated circuits
695 _aCMOS technology
695 _aCapacitance
695 _aCarbon
695 _aCarrier confinement
695 _aCathodes
695 _aCavity resonators
695 _aCharge carrier processes
695 _aChemical sensors
695 _aCoherence
695 _aComputers
695 _aConductivity
695 _aCorrelation
695 _aCouplings
695 _aCurrent
695 _aCurrent measurement
695 _aCurrent-voltage characteristics
695 _aData mining
695 _aDetectors
695 _aDielectrics
695 _aDiode lasers
695 _aDispersion
695 _aDistributed Bragg reflectors
695 _aDoping
695 _aElectric fields
695 _aElectric potential
695 _aElectron optics
695 _aElectron tubes
695 _aEnergy loss
695 _aEnergy resolution
695 _aEpitaxial growth
695 _aEquations
695 _aEtching
695 _aFabrication
695 _aFace
695 _aFilms
695 _aFlash memory
695 _aFluctuations
695 _aFocusing
695 _aGallium nitride
695 _aGames
695 _aGas lasers
695 _aGases
695 _aGermanium
695 _aGratings
695 _aHall effect
695 _aHeating
695 _aHippocampus
695 _aHospitals
695 _aHysteresis
695 _aImpact ionization
695 _aIndexes
695 _aIndium phosphide
695 _aInformation processing
695 _aLaser transitions
695 _aLead
695 _aLithography
695 _aLogic gates
695 _aLuminescence
695 _aMOSFETs
695 _aMagnetic fields
695 _aMagnetic hysteresis
695 _aMagnetization
695 _aMaterials
695 _aMetals
695 _aMetamaterials
695 _aMicrocavities
695 _aMicroelectronics
695 _aMicroprocessors
695 _aMicrostrip
695 _aMicrostructure
695 _aMilling
695 _aModulation
695 _aMorphology
695 _aNanophotonics
695 _aNanoscale devices
695 _aNanostructures
695 _aNanowires
695 _aNerve fibers
695 _aNext generation networking
695 _aNickel
695 _aNoise
695 _aNonvolatile memory
695 _aNumerical analysis
695 _aOptical device fabrication
695 _aOptical fibers
695 _aOptical interconnections
695 _aOptical losses
695 _aOptical materials
695 _aOptical polarization
695 _aOptical pumping
695 _aOptical receivers
695 _aOptical resonators
695 _aOptical sensors
695 _aOptical surface waves
695 _aOptical transmitters
695 _aOptical waveguides
695 _aPassivation
695 _aPassive optical networks
695 _aPhase change materials
695 _aPhonons
695 _aPhotodetectors
695 _aPhotonic band gap
695 _aPhotonic crystals
695 _aPhotonics
695 _aPhotovoltaic cells
695 _aPixel
695 _aPlasmas
695 _aPower demand
695 _aProposals
695 _aPump lasers
695 _aQuantization
695 _aQuantum cascade lasers
695 _aQuantum computing
695 _aQuantum dots
695 _aRadiative recombination
695 _aRandom access memory
695 _aRegisters
695 _aResonant frequency
695 _aResource management
695 _aScattering
695 _aSelf-assembly
695 _aSemiconductor device measurement
695 _aSemiconductor lasers
695 _aSemiconductor waveguides
695 _aSensitivity
695 _aSensor phenomena and characterization
695 _aSilicon
695 _aSilicon germanium
695 _aSilicon on insulator technology
695 _aSolid modeling
695 _aStimulated emission
695 _aStrain
695 _aStress
695 _aSubstrates
695 _aSuperconducting magnets
695 _aSwitches
695 _aSynchronization
695 _aTechnological innovation
695 _aTelecommunications
695 _aTemperature distribution
695 _aTemperature measurement
695 _aTemperature sensors
695 _aTensile strain
695 _aThermal conductivity
695 _aThin film transistors
695 _aThree dimensional displays
695 _aTunneling
695 _aVertical cavity surface emitting lasers
695 _aVoltage measurement
695 _aWaveguide lasers
695 _aWires
700 1 _aLuryi, Serge,
_d1947-
_927513
700 1 _aXu, Jimmy,
_d1957-
_927514
700 1 _aZaslavsky, Alexander,
_d1963-
_927515
710 2 _aIEEE Xplore (Online Service),
_edistributor.
_927516
710 2 _aJohn Wiley & Sons,
_epublisher.
_96902
730 0 _aIEEE Xplore (Livres)
_926022
776 0 8 _iPrint version:
_z9781118442166
856 4 2 _3Abstract with links to resource
_uhttps://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=5599322
942 _cEBK
999 _c74086
_d74086