000			10778nam a2202029 i 4500
001			7753056
003			IEEE
005			20220712205940.0
006			m o d
007			cr |n|||||||||
008			170118s2016 njua ob 001 eng d
010			_z 2007001281 (print)
015			_zGBA6A5950 (print)
016			_z013629291 (print)
020			_a9781119069225 _qelectronic
020			_z9781119069119 _qprint
020			_z9780470081464 _qPaper
020			_z0470081465 _qPaper
024	7		_a10.1002/9781119069225 _2doi
035			_a(CaBNVSL)mat07753056
035			_a(IDAMS)0b0000648585c6cb
040			_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL
050		4	_aT174.7 _b.F86 2007eb
082	0	0	_a621.381 _222
111	2		_aFTM-5 _d(2006 : _cCrete, Greece) _926090
245	1	0	_aFuture trends in microelectronics : _bup the nano creek / _cedited by Serge Luryi, Jimmy Xu, Alex Zaslavsky.
264		1	_aHoboken, New Jersey : _bWiley-Interscience, _cc2007.
264		2	_a[Piscataqay, New Jersey] : _bIEEE Xplore, _c[2016]
300			_a1 PDF (xiv, 459 pages) : _billustrations.
336			_atext _2rdacontent
337			_aelectronic _2isbdmedia
338			_aonline resource _2rdacarrier
500			_a"This book is a brainchild of the fifth workshop in the Future Trends in Microelectronics series (FTM-5) ... on Crete, Greece, in June of 2006"--Pref.
504			_aIncludes bibliographical references and index.
505	0		_aPreface / S. Luryi, J. M. Xu, and A. Zaslavsky ix -- I FUTURE OF DIGITAL SILICON 1 -- Prospects of Future Si Technologies in the Data-Driven World 4 / K. Kim and G. Jeong -- How Lithography Enables Moore's Law 21 / J. P. H. Benschop -- What Happened to Post-CMOS? 31 / P. M. Solomon -- Three-Dimensional Integration of Ge and Two-Dimensional: Materials for One-Dimensional Devices 46 / M. �Ostling, E. Dentoni Litta, and P.-E. Hellstr�om -- Challenges to Ultra-Low-Power Semiconductor Device Operation 62 / F. Balestra -- A Universal Nonvolatile Processing Environment 74 / T. Windbacher, A. Makarov, V. Sverdlov, and S. Selberherr -- Can MRAM (Finally) Be a Factor? 82 / J.-P. Nozi�eres -- Nanomanufacturing for Electronics or Optoelectronics 91 / M. J. Kelly -- II NEW MATERIALS AND NEW PHYSICS 99 -- Surface Waves Everywhere 102 / M. I. Dyakonov -- Graphene and Atom-Thick Two-Dimensional Materials: Device Application Prospects 114 / S. Hwang, J. Heo, M.-H. Lee, K.-E. Byun, Y. Cho, and S. Park -- Computing with Coupled Relaxation Oscillators 131 / N. Shukla, A. Parihar, A. Raychowdhury, and S. Datta -- On the Field-Induced Insulator-Metal Transition in VO2 Films 140 / S. Luryi and B. Spivak -- Group IV Alloys for Advanced Nano- and Optoelectronic Applications 150 / D. GrŠutzmacher -- High-Sn Content GeSn Light Emitters for Silicon Photonics 162 / D. Stange, C. Schulte-Braucks, N. von den Driesch, S. Wirths, R. Geiger, T. Zabel, G. Mussler, S. Lenk, T. Stoica, J. M. Hartmann, H. Sigg, Z. Ikonic, S. Mantl, D. GrŠutzmacher, and D. Buca -- Gallium Nitride-Based Lateral and Vertical Nanowire Devices 174 / Y.-W. Jo, D.-H. Son, K.-S. Im, and J.-H. Lee -- Scribing Graphene Circuits 183 / N. Rodriguez, R. J. Ruiz, C. Marquez, and F. Gamiz -- Structure and Electron Transport in Irradiated Monolayer Graphene 193 -- I. Shlimak, A. V. Butenko, E. Zion, V. Richter, Yu. Kaganovskii, L. Wolfson, A. Sharoni, A. Haran, D. Naveh, E. Kogan, and M. Kaveh -- Interplay of Coulomb Blockade and Luttinger-Liquid Physics in Disordered One-Dimensional InAs Nanowires with Strong Spin Orbit Coupling 206 / R. Hevroni, V. Shelukhin, M. Karpovski, M. Goldstein, E. Sela, A. Palevski, and H. Shtrikman.
505	8		_aIII MICROELECTRONICS IN HEALTH, ENERGY HARVESTING, AND COMMUNICATIONS 215 -- Image-Guided Intervention and Therapy: The First Time Right 218 / B. H. W. Hendriks, D. Mioni, W. Crooijmans, and H. van Houten -- Rewiring the Nervous System, Without Wires 231 / D. A. Borton -- Nano-Power Integrated Electronics for Energy Harvesting, Conversion and Management 245 / A. Romani, M. Dini, M. Filippi, M. Tartagni, and E. Sangiorgi -- Will Composite Nanomaterials Replace Piezoelectric Thin Films for Energy Transduction Applications 259 / R. Tao, G. Ardila, R. Hinchet, A. Michard, L. Mont�es, and M. Mouis -- New Generation of Vertical Cavity Surface Emitting Lasers for Optical Interconnects 273 / N. Ledentsov Jr., V. A. Shchukin, N. N. Ledentsov, J.-R. Kopp, S. Burger, and F. Schmidt -- Reconfigurable Infrared Photodetector Based on Asymmetrically Doped Double Quantum Wells for Multicolor and Remote Temperature Sensing 289 / X. Zhang, V. Mitin, G. Thomain, T. Yore, Y. Li, J. K. Choi, K. Sablon, and A. Sergeev -- Tunable Photonic Molecules for Spectral Engineering in Dense Photonic Integration 298 / M. C. M. M. Souza, G. F. M. Rezende, A. A. G. von Zuben, G. S. Wiederhecker, N. C. Frateschi, and L. A. M. Barea -- INDEX 307.
506	1		_aRestricted to subscribers or individual electronic text purchasers.
520			_aPresents the developments in microelectronic-related fields, with comprehensive insight from a number of leading industry professionals The book presents the future developments and innovations in the developing field of microelectronics. The book's chapters contain contributions from various authors, all of whom are leading industry professionals affiliated either with top universities, major semiconductor companies, or government laboratories, discussing the evolution of their profession. A wide range of microelectronic-related fields are examined, including solid-state electronics, material science, optoelectronics, bioelectronics, and renewable energies. The topics covered range from fundamental physical principles, materials and device technologies, and major new market opportunities. . Describes the expansion of the field into hot topics such as energy (photovoltaics) and medicine (bio-nanotechnology). Provides contributions from leading industry professionals in semiconductor micro- and nano-electronics. Discusses the importance of micro- and nano-electronics in today's rapidly changing and expanding information society Future Trends in Microelectronics: Journey into the Unknown is written for industry professionals and graduate students in engineering, physics, and nanotechnology.
530			_aAlso available in print.
538			_aMode of access: World Wide Web
588			_aDescription based on PDF viewed 01/18/2017.
650		0	_aNanotechnology _vCongresses. _926091
650		0	_aMicroelectronics _vCongresses. _926092
655		0	_aElectronic books. _93294
695			_aTime-domain analysis
695			_aTorque
695			_aTransducers
695			_aTunneling
695			_aTunneling magnetoresistance
695			_aTwo dimensional displays
695			_aVanadium
695			_aVertical cavity surface emitting lasers
695			_aVoltage control
695			_aVoltage measurement
695			_aWet etching
695			_aWireless communication
695			_aWireless sensor networks
695			_aWires
695			_aX-ray imaging
695			_aZinc oxide
695			_aApertures
695			_aCMOS technology
695			_aCapacitance
695			_aCapacitors
695			_aCatheters
695			_aCavity resonators
695			_aClocks
695			_aComputed tomography
695			_aConductivity
695			_aCouplings
695			_aCrystals
695			_aDark current
695			_aData communication
695			_aDetectors
695			_aDielectric constant
695			_aDielectrics
695			_aDispersion
695			_aElectric fields
695			_aElectrostatics
695			_aEnergy harvesting
695			_aFabrication
695			_aField effect transistors
695			_aFilms
695			_aFlip-flops
695			_aGallium
695			_aGallium arsenide
695			_aGallium nitride
695			_aGraphene
695			_aGravity
695			_aHEMTs
695			_aHeart
695			_aII-VI semiconductor materials
695			_aIntegrated circuit interconnections
695			_aIntegrated circuits
695			_aIntegrated optics
695			_aIons
695			_aLaser beams
695			_aLaser modes
695			_aLenses
695			_aLight emitting diodes
695			_aLithography
695			_aLogic gates
695			_aMOSFET
695			_aMagnetic anisotropy
695			_aMagnetic separation
695			_aMagnetic tunneling
695			_aMagnetization
695			_aMarket research
695			_aMechanical factors
695			_aMedical treatment
695			_aMetals
695			_aMicroelectronics
695			_aNanoscale devices
695			_aNanowires
695			_aNonvolatile memory
695			_aOptical coupling
695			_aOptical device fabrication
695			_aOptical filters
695			_aOptical imaging
695			_aOptical refraction
695			_aOptical resonators
695			_aOptical surface waves
695			_aOptical variables control
695			_aOptical waveguides
695			_aOrbits
695			_aOscillators
695			_aPerformance evaluation
695			_aPerpendicular magnetic anisotropy
695			_aPhotoconductivity
695			_aPhotonic band gap
695			_aPhotonics
695			_aPhysics
695			_aPiezoelectric materials
695			_aPlasmas
695			_aPower demand
695			_aProbes
695			_aProcess control
695			_aProduction
695			_aRadiation effects
695			_aRaman scattering
695			_aRandom access memory
695			_aReal-time systems
695			_aReliability
695			_aSea surface
695			_aSelf-assembly
695			_aSensors
695			_aShape
695			_aSilicon
695			_aSilicon photonics
695			_aSpinal cord
695			_aSplit gate flash memory cells
695			_aStrain
695			_aSubstrates
695			_aSurface acoustic waves
695			_aSurface treatment
695			_aSwitches
695			_aSwitching circuits
695			_aSynchronization
695			_aTemperature
695			_aTemperature dependence
695			_aTemperature measurement
695			_aTemperature sensors
695			_aThree-dimensional displays
700	1		_aLuryi, Serge. _926094
700	1		_aXu, Jimmy. _926095
700	1		_aZaslavsky, Alex, _d1963- _928252
710	2		_aIEEE Xplore (Online Service), _edistributor. _928993
710	2		_aWiley, _epublisher. _928994
776	0	8	_iPrint version: _z9781119069119
856	4	2	_3Abstract with links to resource _uhttps://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=7753056
942			_cEBK
999			_c74482 _d74482