000 03035nam a22004935i 4500
001 978-3-030-12053-5
003 DE-He213
005 20220801213637.0
007 cr nn 008mamaa
008 190507s2020 sz | s |||| 0|eng d
020 _a9783030120535
_9978-3-030-12053-5
024 7 _a10.1007/978-3-030-12053-5
_2doi
050 4 _aTK7867-7867.5
072 7 _aTJFC
_2bicssc
072 7 _aTEC008010
_2bisacsh
072 7 _aTJFC
_2thema
082 0 4 _a621.3815
_223
100 1 _aLitvinov, Vladimir.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_933401
245 1 0 _aMagnetism in Topological Insulators
_h[electronic resource] /
_cby Vladimir Litvinov.
250 _a1st ed. 2020.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2020.
300 _aXI, 158 p. 92 illus., 78 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
505 0 _aIntroduction -- Energy bands in topological insulators -- Magnetic doping and ferromagnetic proximity effects -- Electrodynamics of topological phase -- Thin TI films -- Rashba interaction in topological insulators -- Spin-electron coupling in topological phase -- Dirac fermions mediated indirect exchange interaction.
520 _aThis book serves as a brief introduction to topological insulator physics and device applications. Particular attention is paid to the indirect exchange interaction mediated by near surface Dirac fermions and the spin texture this interaction favors. Along with useful information on semiconductor material systems, the book provides a theoretical background for most common concepts of TI physics. Readers will benefit from up to date information and methods needed to start working in TI physics, theory, experiment and device applications. Discusses inter-spin interaction via massless and massive Dirac excitations; Includes coverage of near-surface spin texture of the magnetic atoms as related to their mutual positions as well to their positions with respect to top and bottom surfaces in thin TI film; Describes non-RKKY oscillating inter-spin interaction as a signature of the topological state; Explains the origin of the giant Rashba interaction at quantum phase transition in TI-conventional semiconductors.
650 0 _aElectronic circuits.
_919581
650 0 _aSemiconductors.
_93077
650 1 4 _aElectronic Circuits and Systems.
_933402
650 2 4 _aSemiconductors.
_93077
710 2 _aSpringerLink (Online service)
_933403
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783030120528
776 0 8 _iPrinted edition:
_z9783030120542
776 0 8 _iPrinted edition:
_z9783030120559
856 4 0 _uhttps://doi.org/10.1007/978-3-030-12053-5
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cEBK
999 _c75429
_d75429