000 | 03452nam a22005535i 4500 | ||
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001 | 978-3-030-55119-3 | ||
003 | DE-He213 | ||
005 | 20220801213751.0 | ||
007 | cr nn 008mamaa | ||
008 | 201106s2021 sz | s |||| 0|eng d | ||
020 |
_a9783030551193 _9978-3-030-55119-3 |
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024 | 7 |
_a10.1007/978-3-030-55119-3 _2doi |
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050 | 4 | _aTK7867-7867.5 | |
072 | 7 |
_aTJFC _2bicssc |
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072 | 7 |
_aTEC008010 _2bisacsh |
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072 | 7 |
_aTJFC _2thema |
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082 | 0 | 4 |
_a621.3815 _223 |
100 | 1 |
_aGupta, Navneet. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _934207 |
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245 | 1 | 0 |
_aTFET Integrated Circuits _h[electronic resource] : _bFrom Perspective Towards Reality / _cby Navneet Gupta, Adam Makosiej, Amara Amara, Andrei Vladimirescu, Costin Anghel. |
246 | 3 | _aa | |
250 | _a1st ed. 2021. | ||
264 | 1 |
_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2021. |
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300 |
_aXV, 139 p. 129 illus., 104 illus. in color. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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347 |
_atext file _bPDF _2rda |
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505 | 0 | _aIntroduction -- State of the art -- TFET circuits -- Extension of TFET architectures to present CMOS technology -- System Architectures -- Conclusion & Future Perspective. | |
520 | _aThis book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs). The authors describe the peculiarities of TFET ICs and their differences with MOSFETs. They also develop and analyze a number of logic circuits and memories. The discussion also includes complex circuits combining CMOS and TFET, as well as a potential fabrication process in Silicon. Provides readers with a realistic view of a potential future path of higher-scale integration of circuits and systems; Discusses the advantages and disadvantages of TFETs vs. CMOS for different applications; Describes methodology to combine two types of devices on the same Silicon substrate to benefit from the speed of CMOS and the low leakage of TFETs and demonstrates the performance and integration gain of the two devices complementing each other. | ||
650 | 0 |
_aElectronic circuits. _919581 |
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650 | 0 |
_aElectronics. _93425 |
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650 | 1 | 4 |
_aElectronic Circuits and Systems. _934208 |
650 | 2 | 4 |
_aElectronics and Microelectronics, Instrumentation. _932249 |
700 | 1 |
_aMakosiej, Adam. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _934209 |
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700 | 1 |
_aAmara, Amara. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _934210 |
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700 | 1 |
_aVladimirescu, Andrei. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _934211 |
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700 | 1 |
_aAnghel, Costin. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _934212 |
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710 | 2 |
_aSpringerLink (Online service) _934213 |
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773 | 0 | _tSpringer Nature eBook | |
776 | 0 | 8 |
_iPrinted edition: _z9783030551186 |
776 | 0 | 8 |
_iPrinted edition: _z9783030551209 |
776 | 0 | 8 |
_iPrinted edition: _z9783030551216 |
856 | 4 | 0 | _uhttps://doi.org/10.1007/978-3-030-55119-3 |
912 | _aZDB-2-ENG | ||
912 | _aZDB-2-SXE | ||
942 | _cEBK | ||
999 |
_c75571 _d75571 |