000 03452nam a22005535i 4500
001 978-3-030-55119-3
003 DE-He213
005 20220801213751.0
007 cr nn 008mamaa
008 201106s2021 sz | s |||| 0|eng d
020 _a9783030551193
_9978-3-030-55119-3
024 7 _a10.1007/978-3-030-55119-3
_2doi
050 4 _aTK7867-7867.5
072 7 _aTJFC
_2bicssc
072 7 _aTEC008010
_2bisacsh
072 7 _aTJFC
_2thema
082 0 4 _a621.3815
_223
100 1 _aGupta, Navneet.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_934207
245 1 0 _aTFET Integrated Circuits
_h[electronic resource] :
_bFrom Perspective Towards Reality /
_cby Navneet Gupta, Adam Makosiej, Amara Amara, Andrei Vladimirescu, Costin Anghel.
246 3 _aa
250 _a1st ed. 2021.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2021.
300 _aXV, 139 p. 129 illus., 104 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
505 0 _aIntroduction -- State of the art -- TFET circuits -- Extension of TFET architectures to present CMOS technology -- System Architectures -- Conclusion & Future Perspective.
520 _aThis book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs). The authors describe the peculiarities of TFET ICs and their differences with MOSFETs. They also develop and analyze a number of logic circuits and memories. The discussion also includes complex circuits combining CMOS and TFET, as well as a potential fabrication process in Silicon. Provides readers with a realistic view of a potential future path of higher-scale integration of circuits and systems; Discusses the advantages and disadvantages of TFETs vs. CMOS for different applications; Describes methodology to combine two types of devices on the same Silicon substrate to benefit from the speed of CMOS and the low leakage of TFETs and demonstrates the performance and integration gain of the two devices complementing each other.
650 0 _aElectronic circuits.
_919581
650 0 _aElectronics.
_93425
650 1 4 _aElectronic Circuits and Systems.
_934208
650 2 4 _aElectronics and Microelectronics, Instrumentation.
_932249
700 1 _aMakosiej, Adam.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_934209
700 1 _aAmara, Amara.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_934210
700 1 _aVladimirescu, Andrei.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_934211
700 1 _aAnghel, Costin.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_934212
710 2 _aSpringerLink (Online service)
_934213
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783030551186
776 0 8 _iPrinted edition:
_z9783030551209
776 0 8 _iPrinted edition:
_z9783030551216
856 4 0 _uhttps://doi.org/10.1007/978-3-030-55119-3
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cEBK
999 _c75571
_d75571