000 03806nam a22004935i 4500
001 978-3-319-93988-9
003 DE-He213
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007 cr nn 008mamaa
008 180928s2019 sz | s |||| 0|eng d
020 _a9783319939889
_9978-3-319-93988-9
024 7 _a10.1007/978-3-319-93988-9
_2doi
050 4 _aTK7867-7867.5
072 7 _aTJFC
_2bicssc
072 7 _aTEC008010
_2bisacsh
072 7 _aTJFC
_2thema
082 0 4 _a621.3815
_223
100 1 _aBaliga, B. Jayant.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_937695
245 1 0 _aFundamentals of Power Semiconductor Devices
_h[electronic resource] /
_cby B. Jayant Baliga.
250 _a2nd ed. 2019.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2019.
300 _aXXXII, 1086 p. 838 illus., 559 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
505 0 _aIntroduction -- Material Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Insulated Gate Bipolar Thyristors -- Synopsis.
520 _aThis textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions. Provides comprehensive textbook for courses on physics of power semiconductor devices; Includes extensive analytical formulations for design and analysis of device structures; Uses numerical simulation examples in every section to elucidate the operating physics and validate the models; Analyzes device performance attributes that enable development of real, energy-efficient products; Includes numerous exercises in each chapter to reinforce concepts introduced; Includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.
650 0 _aElectronic circuits.
_919581
650 0 _aElectronics.
_93425
650 1 4 _aElectronic Circuits and Systems.
_937696
650 2 4 _aElectronics and Microelectronics, Instrumentation.
_932249
710 2 _aSpringerLink (Online service)
_937697
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783319939872
776 0 8 _iPrinted edition:
_z9783319939896
776 0 8 _iPrinted edition:
_z9783030067656
856 4 0 _uhttps://doi.org/10.1007/978-3-319-93988-9
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cEBK
999 _c76221
_d76221