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001 978-3-319-43199-4
003 DE-He213
005 20220801215717.0
007 cr nn 008mamaa
008 160908s2017 sz | s |||| 0|eng d
020 _a9783319431994
_9978-3-319-43199-4
024 7 _a10.1007/978-3-319-43199-4
_2doi
050 4 _aTK1001-1841
072 7 _aTHR
_2bicssc
072 7 _aTEC046000
_2bisacsh
072 7 _aTHR
_2thema
082 0 4 _a621.31
_223
245 1 0 _aPower GaN Devices
_h[electronic resource] :
_bMaterials, Applications and Reliability /
_cedited by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni.
250 _a1st ed. 2017.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2017.
300 _aX, 380 p. 306 illus., 266 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aPower Electronics and Power Systems,
_x2196-3193
505 0 _a1 Properties and advantages of gallium nitride; Daisuke Ueda -- 2 Substrate issues and epitaxial growth; Stacia Keller -- 3 GaN-on-Silicon CMOS compatible process; Denis Marcon -- 4 Lateral GaN-based power devices; Umesh Mishra -- 5 GaN-based vertical transistors; Srabanti Chowduri -- 6 GaN-based nanowire transistors; Tomas Palacios -- 7 Deep level characterization: electrical and optical methods; Robert Kaplar -- 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi -- 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni -- 10 Cascode configuration for normally-off devices; Primit Parikh -- 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda -- 12 Fluorine implanted E-mode transistors; Kevin Chen -- 13 Drift effects in GaN HV power transistors; Joachim Wuerfl -- 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee -- 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.
520 _aThis book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
650 0 _aElectric power production.
_927574
650 0 _aSemiconductors.
_93077
650 0 _aOptical materials.
_97729
650 0 _aElectronics.
_93425
650 1 4 _aElectrical Power Engineering.
_931821
650 2 4 _aSemiconductors.
_93077
650 2 4 _aOptical Materials.
_97729
650 2 4 _aMechanical Power Engineering.
_932122
650 2 4 _aElectronics and Microelectronics, Instrumentation.
_932249
700 1 _aMeneghini, Matteo.
_eeditor.
_4edt
_4http://id.loc.gov/vocabulary/relators/edt
_946014
700 1 _aMeneghesso, Gaudenzio.
_eeditor.
_4edt
_4http://id.loc.gov/vocabulary/relators/edt
_946015
700 1 _aZanoni, Enrico.
_eeditor.
_4edt
_4http://id.loc.gov/vocabulary/relators/edt
_946016
710 2 _aSpringerLink (Online service)
_946017
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783319431970
776 0 8 _iPrinted edition:
_z9783319431987
776 0 8 _iPrinted edition:
_z9783319827568
830 0 _aPower Electronics and Power Systems,
_x2196-3193
_946018
856 4 0 _uhttps://doi.org/10.1007/978-3-319-43199-4
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cEBK
999 _c77783
_d77783