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001 978-3-030-68940-7
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008 210331s2021 sz | s |||| 0|eng d
020 _a9783030689407
_9978-3-030-68940-7
024 7 _a10.1007/978-3-030-68940-7
_2doi
050 4 _aTK7867-7867.5
072 7 _aTJFC
_2bicssc
072 7 _aTEC008010
_2bisacsh
072 7 _aTJFC
_2thema
082 0 4 _a621.3815
_223
100 1 _aSeidel, Achim.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_947049
245 1 0 _aHighly Integrated Gate Drivers for Si and GaN Power Transistors
_h[electronic resource] /
_cby Achim Seidel, Bernhard Wicht.
250 _a1st ed. 2021.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2021.
300 _aXVII, 124 p. 72 illus., 56 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
505 0 _aChapter 1. Introduction -- Chapter 2. Fundamentals -- Chapter 3. Gate Drivers Based on High-Voltage Charge Storing (HVCS) -- Chapter 4. Gate Drivers Based on High-Voltage Energy Storing (HVES) -- Chapter 5. Gate Drivers for Large Gate Loops Based on HVES -- Chapter 6. Outlook and FutureWork -- Chapter 7. Conclusion.
520 _aThis book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions. Provides readers with a comprehensive, all-in-one source for gate driver IC design, including implementation examples; Introduces new gate drive concepts including theory and design guidelines; Describes new gate driver architectures based on the presented gate drive concepts; Includes circuit design solutions, design aspects, and experimental verification of the implemented gate drivers; Covers the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors.
650 0 _aElectronic circuits.
_919581
650 0 _aElectronics.
_93425
650 0 _aSemiconductors.
_93077
650 1 4 _aElectronic Circuits and Systems.
_947050
650 2 4 _aElectronics and Microelectronics, Instrumentation.
_932249
650 2 4 _aSemiconductors.
_93077
700 1 _aWicht, Bernhard.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_947051
710 2 _aSpringerLink (Online service)
_947052
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783030689391
776 0 8 _iPrinted edition:
_z9783030689414
776 0 8 _iPrinted edition:
_z9783030689421
856 4 0 _uhttps://doi.org/10.1007/978-3-030-68940-7
912 _aZDB-2-ENG
912 _aZDB-2-SXE
942 _cEBK
999 _c77967
_d77967