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245 1 0 _aMicroelectronics, Circuits and Systems
_h[electronic resource] :
_bSelect Proceedings of 7th International Conference on Micro2020 /
_cedited by Abhijit Biswas, Raghvendra Saxena, Debashis De.
250 _a1st ed. 2021.
264 1 _aSingapore :
_bSpringer Nature Singapore :
_bImprint: Springer,
_c2021.
300 _aX, 251 p. 189 illus., 170 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
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338 _aonline resource
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347 _atext file
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490 1 _aLecture Notes in Electrical Engineering,
_x1876-1119 ;
_v755
505 0 _aPart 1: Advanced MOSFETs -- Chapter 1. High Switching Performance of Novel Heterogeneous Gate Dielectric – Hetero-material Based Junctionless-TFET -- Chapter 2. Superior Performance of Gate Workfunction and Gate Dielectric Engineered Trapezoidal FinFET in the presence of Trap Charges -- Chapter 3. High-K Biomolecule Sensor Based on L-shaped Tunnel FET -- Chapter 4. A Novel Trench FinFET as biosensor for early detection of Alzheimer’s disease -- Chapter 5. Interface trap charge analysis of junctionless triple metal gate high-k gate all around nanowire FET based biotin biosensor for detection of cardiovascular diseases -- Chapter 6. Fin Aspect Ratio Optimization of Novel Junctionless Gate Stack Gate All Around (GS-GAA) FinFET for Analog/RF Applications -- Chapter 7. Design and Analysis of Cyl GAA-TFET based Cross-coupled Voltage Doubler Circuit -- Chapter 8. Impact of channel epilayer induced corner-effect on the sensing performance of a unique pTFET-based biosensor (epi-pTFET-biosensor) -- Chapter 9. Performance Comparison of III-V and Silicon FinFETs for Ultra Low Power VLSI Applications -- Part 2: Memory elements and circuits -- Chapter 10. Radiation Tolerant Memory Cell for Aerospace applications -- Chapter 11. A Highly Reliable and Radiation-Hardened Majority PFET-Based 10T SRAM cell -- Chapter 12. Design and analysis of ultra-low power memory architecture with MTCMOS asymmetrical ground-gated 7T SRAM cell -- Chapter 13. Data Aware near Subthreshold 10T SRAM cell for ultra-low power application -- Chapter 14. Radiation Immune SRAM Cell for Deep Space Applications -- Part 3: HEMTs, MEMS and Photovoltaics -- Chapter 15. Comparative study of InAlN and InGaN Back Barrier layer on p-Gate/AlGaN/GaN HEMT.
520 _aThis book presents a collection of peer-reviewed articles from the 7th International Conference on Microelectronics, Circuits, and Systems – Micro 2020. The volume covers the latest development and emerging research topics of material sciences, devices, microelectronics, circuits, nanotechnology, system design and testing, simulation, sensors, photovoltaics, optoelectronics, and its different applications. This book also deals with several tools and techniques to match the theme of the conference. It will be a valuable resource for researchers, professionals, Ph.D. scholars, undergraduate and postgraduate students working in Electronics, Microelectronics, Electrical, and Computer Engineering.
650 0 _aElectronic circuits.
_919581
650 0 _aElectronics.
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650 0 _aTelecommunication.
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650 1 4 _aElectronic Circuits and Systems.
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650 2 4 _aElectronics and Microelectronics, Instrumentation.
_932249
650 2 4 _aCommunications Engineering, Networks.
_931570
700 1 _aBiswas, Abhijit.
_eeditor.
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_4http://id.loc.gov/vocabulary/relators/edt
_948212
700 1 _aSaxena, Raghvendra.
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700 1 _aDe, Debashis.
_eeditor.
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710 2 _aSpringerLink (Online service)
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773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
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776 0 8 _iPrinted edition:
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776 0 8 _iPrinted edition:
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830 0 _aLecture Notes in Electrical Engineering,
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856 4 0 _uhttps://doi.org/10.1007/978-981-16-1570-2
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