| 000 | 03683nam a22005655i 4500 | ||
|---|---|---|---|
| 001 | 978-3-319-70917-8 | ||
| 003 | DE-He213 | ||
| 005 | 20220801221153.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 180216s2018 sz | s |||| 0|eng d | ||
| 020 |
_a9783319709178 _9978-3-319-70917-8 |
||
| 024 | 7 |
_a10.1007/978-3-319-70917-8 _2doi |
|
| 050 | 4 | _aTK7867-7867.5 | |
| 072 | 7 |
_aTJFC _2bicssc |
|
| 072 | 7 |
_aTEC008010 _2bisacsh |
|
| 072 | 7 |
_aTJFC _2thema |
|
| 082 | 0 | 4 |
_a621.3815 _223 |
| 100 | 1 |
_aLutz, Josef. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _954492 |
|
| 245 | 1 | 0 |
_aSemiconductor Power Devices _h[electronic resource] : _bPhysics, Characteristics, Reliability / _cby Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker. |
| 250 | _a2nd ed. 2018. | ||
| 264 | 1 |
_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2018. |
|
| 300 |
_aXIX, 714 p. _bonline resource. |
||
| 336 |
_atext _btxt _2rdacontent |
||
| 337 |
_acomputer _bc _2rdamedia |
||
| 338 |
_aonline resource _bcr _2rdacarrier |
||
| 347 |
_atext file _bPDF _2rda |
||
| 505 | 0 | _aPower Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration. | |
| 520 | _aThis book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition. | ||
| 650 | 0 |
_aElectronic circuits. _919581 |
|
| 650 | 0 |
_aElectric power production. _927574 |
|
| 650 | 0 |
_aElectronics. _93425 |
|
| 650 | 1 | 4 |
_aElectronic Circuits and Systems. _954493 |
| 650 | 2 | 4 |
_aElectrical Power Engineering. _931821 |
| 650 | 2 | 4 |
_aMechanical Power Engineering. _932122 |
| 650 | 2 | 4 |
_aElectronics and Microelectronics, Instrumentation. _932249 |
| 700 | 1 |
_aSchlangenotto, Heinrich. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _954494 |
|
| 700 | 1 |
_aScheuermann, Uwe. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _954495 |
|
| 700 | 1 |
_aDe Doncker, Rik. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _954496 |
|
| 710 | 2 |
_aSpringerLink (Online service) _954497 |
|
| 773 | 0 | _tSpringer Nature eBook | |
| 776 | 0 | 8 |
_iPrinted edition: _z9783319709161 |
| 776 | 0 | 8 |
_iPrinted edition: _z9783319709185 |
| 776 | 0 | 8 |
_iPrinted edition: _z9783319890111 |
| 856 | 4 | 0 | _uhttps://doi.org/10.1007/978-3-319-70917-8 |
| 912 | _aZDB-2-ENG | ||
| 912 | _aZDB-2-SXE | ||
| 942 | _cEBK | ||
| 999 |
_c79369 _d79369 |
||