| 000 | 03074nam a22005895i 4500 | ||
|---|---|---|---|
| 001 | 978-981-10-4612-4 | ||
| 003 | DE-He213 | ||
| 005 | 20220801221223.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 171024s2018 si | s |||| 0|eng d | ||
| 020 |
_a9789811046124 _9978-981-10-4612-4 |
||
| 024 | 7 |
_a10.1007/978-981-10-4612-4 _2doi |
|
| 050 | 4 | _aTK7800-8360 | |
| 072 | 7 |
_aTJF _2bicssc |
|
| 072 | 7 |
_aTEC008000 _2bisacsh |
|
| 072 | 7 |
_aTJF _2thema |
|
| 082 | 0 | 4 |
_a621.381 _223 |
| 100 | 1 |
_aSun, Yabin. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _954776 |
|
| 245 | 1 | 0 |
_aResearch on the Radiation Effects and Compact Model of SiGe HBT _h[electronic resource] / _cby Yabin Sun. |
| 250 | _a1st ed. 2018. | ||
| 264 | 1 |
_aSingapore : _bSpringer Nature Singapore : _bImprint: Springer, _c2018. |
|
| 300 |
_aXXIV, 168 p. 171 illus. _bonline resource. |
||
| 336 |
_atext _btxt _2rdacontent |
||
| 337 |
_acomputer _bc _2rdamedia |
||
| 338 |
_aonline resource _bcr _2rdacarrier |
||
| 347 |
_atext file _bPDF _2rda |
||
| 490 | 1 |
_aSpringer Theses, Recognizing Outstanding Ph.D. Research, _x2190-5061 |
|
| 505 | 0 | _aIntroduction -- Ionization damage in SiGe HBT -- Displacement damage with swift heavy ions in SiGe HBT -- Single-event transient induced by pulse laser microbeam in SiGe HBT -- Small-signal equivalent circuit of SiGe HBT based on the distributed effects -- Parameter extraction of SiGe HBT models -- Conclusion. | |
| 520 | _aThis book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique. | ||
| 650 | 0 |
_aElectronics. _93425 |
|
| 650 | 0 |
_aSemiconductors. _93077 |
|
| 650 | 0 |
_aOptical materials. _97729 |
|
| 650 | 0 |
_aElectronic circuits. _919581 |
|
| 650 | 0 |
_aCondensed matter. _917064 |
|
| 650 | 1 | 4 |
_aElectronics and Microelectronics, Instrumentation. _932249 |
| 650 | 2 | 4 |
_aSemiconductors. _93077 |
| 650 | 2 | 4 |
_aOptical Materials. _97729 |
| 650 | 2 | 4 |
_aElectronic Circuits and Systems. _954777 |
| 650 | 2 | 4 |
_aCondensed Matter Physics. _914649 |
| 710 | 2 |
_aSpringerLink (Online service) _954778 |
|
| 773 | 0 | _tSpringer Nature eBook | |
| 776 | 0 | 8 |
_iPrinted edition: _z9789811046117 |
| 776 | 0 | 8 |
_iPrinted edition: _z9789811046131 |
| 776 | 0 | 8 |
_iPrinted edition: _z9789811351815 |
| 830 | 0 |
_aSpringer Theses, Recognizing Outstanding Ph.D. Research, _x2190-5061 _954779 |
|
| 856 | 4 | 0 | _uhttps://doi.org/10.1007/978-981-10-4612-4 |
| 912 | _aZDB-2-ENG | ||
| 912 | _aZDB-2-SXE | ||
| 942 | _cEBK | ||
| 999 |
_c79425 _d79425 |
||