000			03512nam a22005295i 4500
001			978-3-319-27192-7
003			DE-He213
005			20220801221735.0
007			cr nn 008mamaa
008			151229s2016 sz | s |||| 0|eng d
020			_a9783319271927 _9978-3-319-27192-7
024	7		_a10.1007/978-3-319-27192-7 _2doi
050		4	_aTK7867-7867.5
072		7	_aTJFC _2bicssc
072		7	_aTEC008010 _2bisacsh
072		7	_aTJFC _2thema
082	0	4	_a621.3815 _223
100	1		_aCorreia, Ana Paula Pinto. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _957708
245	1	2	_aA Second-Order ΣΔ ADC Using Sputtered IGZO TFTs _h[electronic resource] / _cby Ana Paula Pinto Correia, Pedro Miguel Cândido Barquinha, João Carlos da Palma Goes.
250			_a1st ed. 2016.
264		1	_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2016.
300			_aXIV, 75 p. 54 illus., 12 illus. in color. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aSpringerBriefs in Electrical and Computer Engineering, _x2191-8120
505	0		_aIntroduction -- Thin-film transistors -- Oxide TFTs @ FCT-UNL -- Analog-to-digital converters -- A 2nd-order ∑∆ ADC with oxide TFTs @ FCT-UNL -- Conclusions and Future Perspectives.-.
520			_aThis book discusses the design, electrical simulation and layout of a 2nd-order ∑∆ analog-to-digital converter (ADC), using oxide thin-film transistors (TFTs) technology. The authors provide a unified view of materials science and electronics engineering, in order to guide readers from both fields through key topics. To accomplish this goal, background regarding materials, device physics, characterization techniques, circuit design and layout is given together with a detailed discussion of experimental data. The final simulation results clearly demonstrate the potential of the proposed circuit-level techniques, which enables the implementation of robust and energy efficient ADCs based on oxide TFTs, for moderate resolutions and conversion-rates. Combines materials science and electronics engineering in the same book, making it possible to obtain a general overview, from TFTs production and characterization to their integration in relatively complex circuits; Adapts an a-Si:H TFT RPI model to simulate the behavior of these devices with good fitting to experimental data; Describes the implementation of a 2nd-order ∑∆ ADC using oxide TFTs.
650		0	_aElectronic circuits. _919581
650		0	_aElectronics. _93425
650	1	4	_aElectronic Circuits and Systems. _957709
650	2	4	_aElectronics and Microelectronics, Instrumentation. _932249
700	1		_aCândido Barquinha, Pedro Miguel. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _957710
700	1		_aGoes, João Carlos da Palma. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _957711
710	2		_aSpringerLink (Online service) _957712
773	0		_tSpringer Nature eBook
776	0	8	_iPrinted edition: _z9783319271903
776	0	8	_iPrinted edition: _z9783319271910
830		0	_aSpringerBriefs in Electrical and Computer Engineering, _x2191-8120 _957713
856	4	0	_uhttps://doi.org/10.1007/978-3-319-27192-7
912			_aZDB-2-ENG
912			_aZDB-2-SXE
942			_cEBK
999			_c80000 _d80000