000			02981nam a2200397 i 4500
001			CR9781139505819
003			UkCbUP
005			20230516164908.0
006			m|||||o||d||||||||
007			cr||||||||||||
008			120509s2022||||enk o ||1 0|eng|d
020			_a9781139505819 (ebook)
020			_z9781107032385 (hardback)
040			_aUkCbUP _beng _erda _cUkCbUP
050	0	0	_aTK7874.53 _b.H62 2022
082	0	0	_a621.3815 _223/eng/20220110
100	1		_aHo, P. S., _eauthor. _967974
245	1	0	_aElectromigration in metals : _bfundamentals to nano-interconnects / _cPaul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev.
264		1	_aCambridge ; New York, NY : _bCambridge University Pres, _c2022.
300			_a1 online resource (xiii, 417 pages) : _bdigital, PDF file(s).
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
500			_aTitle from publisher's bibliographic system (viewed on 07 Apr 2022).
505	0		_aIntroduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids.
520			_aLearn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
650		0	_aInterconnects (Integrated circuit technology) _xMaterials. _967975
650		0	_aMetals _xElectric properties. _967976
650		0	_aElectrodiffusion. _967977
700	1		_aHu, Chao-Kun, _d1946- _eauthor. _967978
700	1		_aGall, Martin, _eauthor. _967979
700	1		_aSukharev, Valeriy, _d1952- _eauthor. _967980
776	0	8	_iPrint version: _z9781107032385
856	4	0	_uhttps://doi.org/10.1017/9781139505819
942			_cEBK
999			_c82197 _d82197