000 02315nam a2200337 i 4500
001 CR9780511794490
003 UkCbUP
005 20230516164912.0
006 m|||||o||d||||||||
007 cr||||||||||||
008 141103s2014||||enk o ||1 0|eng|d
020 _a9780511794490 (ebook)
020 _z9781107005938 (hardback)
040 _aUkCbUP
_beng
_erda
_cUkCbUP
050 0 0 _aTK7871.99.M44
_bE54 2014
082 0 0 _a621.3815/28
_223
100 1 _aEngström, Olof,
_eauthor.
_968048
245 1 4 _aThe MOS system /
_cOlof Engström, Chalmers University of Technology, Sweden.
264 1 _aCambridge :
_bCambridge University Press,
_c2014.
300 _a1 online resource (355 pages) :
_bdigital, PDF file(s).
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
500 _aTitle from publisher's bibliographic system (viewed on 05 Oct 2015).
520 _aThis detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.
650 0 _aMetal oxide semiconductors
_xMathematical models.
_968049
650 0 _aSemiconductors
_xMathematical models.
_968050
776 0 8 _iPrint version:
_z9781107005938
856 4 0 _uhttps://doi.org/10.1017/CBO9780511794490
942 _cEBK
999 _c82222
_d82222