000 | 02389nam a2200361 i 4500 | ||
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001 | CR9781139343466 | ||
003 | UkCbUP | ||
005 | 20240730160800.0 | ||
006 | m|||||o||d|||||||| | ||
007 | cr|||||||||||| | ||
008 | 120313s2013||||enk o ||1 0|eng|d | ||
020 | _a9781139343466 (ebook) | ||
020 | _z9781107030411 (hardback) | ||
040 |
_aUkCbUP _beng _erda _cUkCbUP |
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050 | 0 | 0 |
_aTK7871.99.M44 _bF67 2013 |
082 | 0 | 0 |
_a621.3815/284 _223 |
100 | 1 |
_aFossum, Jerry G., _d1943- _eauthor. _974700 |
|
245 | 1 | 0 |
_aFundamentals of ultra-thin-body MOSFETs and FinFETs / _cJerry G. Fossum, University of Florida, Gainesville, Vishal P. Trivedi, Freescale Semiconductor, Arizona. |
246 | 3 | _aFundamentals of ultra-thin-body MOSFETs & FinFETs | |
264 | 1 |
_aCambridge : _bCambridge University Press, _c2013. |
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300 |
_a1 online resource (xvi, 210 pages) : _bdigital, PDF file(s). |
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336 |
_atext _btxt _2rdacontent |
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337 |
_acomputer _bc _2rdamedia |
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338 |
_aonline resource _bcr _2rdacarrier |
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500 | _aTitle from publisher's bibliographic system (viewed on 05 Oct 2015). | ||
505 | 8 | _aMachine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index. | |
520 | _aUnderstand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource. | ||
650 | 0 |
_aMetal oxide semiconductor field-effect transistors. _915501 |
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650 | 0 |
_aIntegrated circuits _xVery large scale integration. _94044 |
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776 | 0 | 8 |
_iPrint version: _z9781107030411 |
856 | 4 | 0 | _uhttps://doi.org/10.1017/CBO9781139343466 |
942 | _cEBK | ||
999 |
_c84215 _d84215 |