000 | 04107nam a22005895i 4500 | ||
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001 | 978-3-031-02030-8 | ||
003 | DE-He213 | ||
005 | 20240730163757.0 | ||
007 | cr nn 008mamaa | ||
008 | 220601s2016 sz | s |||| 0|eng d | ||
020 |
_a9783031020308 _9978-3-031-02030-8 |
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024 | 7 |
_a10.1007/978-3-031-02030-8 _2doi |
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050 | 4 | _aT1-995 | |
072 | 7 |
_aTBC _2bicssc |
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_aTEC000000 _2bisacsh |
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_aTBC _2thema |
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082 | 0 | 4 |
_a620 _223 |
100 | 1 |
_aYu, Shimeng. _eauthor. _4aut _4http://id.loc.gov/vocabulary/relators/aut _980516 |
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245 | 1 | 0 |
_aResistive Random Access Memory (RRAM) _h[electronic resource] / _cby Shimeng Yu. |
250 | _a1st ed. 2016. | ||
264 | 1 |
_aCham : _bSpringer International Publishing : _bImprint: Springer, _c2016. |
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300 |
_aVII, 71 p. _bonline resource. |
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336 |
_atext _btxt _2rdacontent |
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_acomputer _bc _2rdamedia |
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_aonline resource _bcr _2rdacarrier |
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_atext file _bPDF _2rda |
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490 | 1 |
_aSynthesis Lectures on Emerging Engineering Technologies, _x2381-1439 |
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505 | 0 | _aIntroduction to RRAM Technology -- RRAM Device Fabrication and Performances -- RRAM Characterization and Modeling -- RRAM Array Architecture -- Outlook for RRAM's Applications -- Bibliography -- Author Biography. | |
520 | _aRRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM's potential novel applications beyond the NVM applications. | ||
650 | 0 |
_aEngineering. _99405 |
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_aElectrical engineering. _980517 |
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650 | 0 |
_aElectronic circuits. _919581 |
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_aComputers. _98172 |
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_aMaterials science. _95803 |
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650 | 0 |
_aSurfaces (Technology). _910743 |
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650 | 0 |
_aThin films. _97674 |
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650 | 1 | 4 |
_aTechnology and Engineering. _980518 |
650 | 2 | 4 |
_aElectrical and Electronic Engineering. _980519 |
650 | 2 | 4 |
_aElectronic Circuits and Systems. _980520 |
650 | 2 | 4 |
_aComputer Hardware. _933420 |
650 | 2 | 4 |
_aMaterials Science. _95803 |
650 | 2 | 4 |
_aSurfaces, Interfaces and Thin Film. _931793 |
710 | 2 |
_aSpringerLink (Online service) _980521 |
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773 | 0 | _tSpringer Nature eBook | |
776 | 0 | 8 |
_iPrinted edition: _z9783031009020 |
776 | 0 | 8 |
_iPrinted edition: _z9783031031588 |
830 | 0 |
_aSynthesis Lectures on Emerging Engineering Technologies, _x2381-1439 _980522 |
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856 | 4 | 0 | _uhttps://doi.org/10.1007/978-3-031-02030-8 |
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