000 04261nam a22005535i 4500
001 978-3-031-02506-8
003 DE-He213
005 20240730163946.0
007 cr nn 008mamaa
008 220601s2014 sz | s |||| 0|eng d
020 _a9783031025068
_9978-3-031-02506-8
024 7 _a10.1007/978-3-031-02506-8
_2doi
050 4 _aTK1-9971
072 7 _aTHR
_2bicssc
072 7 _aTEC007000
_2bisacsh
072 7 _aTHR
_2thema
082 0 4 _a621.3
_223
100 1 _aGachovska, Tanya Kirilova.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_981364
245 1 0 _aTransient Electro-Thermal Modeling on Power Semiconductor Devices
_h[electronic resource] /
_cby Tanya Kirilova Gachovska, Jerry Hudgins, Bin Du, Enrico Santi.
250 _a1st ed. 2014.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2014.
300 _aXVI, 68 p.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSynthesis Lectures on Power Electronics,
_x1931-9533
505 0 _aNomenclature -- Temperature Dependencies of Material and Device Parameters -- One-Dimensional Thermal Model -- Realization of Power IGBT and Diode Thermal Model -- References -- Authors' Biographies.
520 _aThis book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
650 0 _aElectrical engineering.
_981365
650 0 _aElectric power production.
_927574
650 0 _aElectronics.
_93425
650 1 4 _aElectrical and Electronic Engineering.
_981366
650 2 4 _aElectrical Power Engineering.
_931821
650 2 4 _aMechanical Power Engineering.
_932122
650 2 4 _aElectronics and Microelectronics, Instrumentation.
_932249
700 1 _aHudgins, Jerry.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_981367
700 1 _aDu, Bin.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_981368
700 1 _aSanti, Enrico.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_981369
710 2 _aSpringerLink (Online service)
_981370
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783031013782
776 0 8 _iPrinted edition:
_z9783031036347
830 0 _aSynthesis Lectures on Power Electronics,
_x1931-9533
_981371
856 4 0 _uhttps://doi.org/10.1007/978-3-031-02506-8
912 _aZDB-2-SXSC
942 _cEBK
999 _c85163
_d85163