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020 _a9783031020278
_9978-3-031-02027-8
024 7 _a10.1007/978-3-031-02027-8
_2doi
050 4 _aT1-995
072 7 _aTBC
_2bicssc
072 7 _aTEC000000
_2bisacsh
072 7 _aTBC
_2thema
082 0 4 _a620
_223
100 1 _aAshraf, Nabil Shovon.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_985406
245 1 0 _aNew Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation
_h[electronic resource] /
_cby Nabil Shovon Ashraf, Shawon Alam, Mohaiminul Alam.
250 _a1st ed. 2016.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2016.
300 _aVIII, 72 p.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSynthesis Lectures on Emerging Engineering Technologies,
_x2381-1439
505 0 _aReview of Research on Scaled Device Architectures and Importance of Lower Substrate Temperature Operation of n-MOSFETs -- Review of Research on Scaled Device Architectures and Importance of Lower Substrate Temperature Operation of n-MOSFETs -- Step-by-Step Computation of Threshold Voltage as a Function of Substrate Temperatures -- Step-by-Step Computation of Threshold Voltage as a Function of Substrate Temperatures -- Simulation Outcomes For Profile of Threshold Voltage As a Function of Substrate Temperature Based on Key Device-Centric Parameters -- Simulation Outcomes For Profile of Threshold Voltage As a Function of Substrate Temperature Based on Key Device-Centric Parameters -- Scaling Projection of Long Channel Threshold Voltage Variability with Substrate Temperatures to Scaled Node -- Scaling Projection of Long Channel Threshold Voltage Variability with Substrate Temperatures to Scaled Node -- Advantage of Lower Substrate Temperature MOSFET Operation to Minimize Short Channel Effects andEnhance Reliability -- Advantage of Lower Substrate Temperature MOSFET Operation to Minimize Short Channel Effects and Enhance Reliability -- A Prospective Outlook on Implementation Methodology of Regulating Substrate Temperatures on Silicon Die -- A Prospective Outlook on Implementation Methodology of Regulating Substrate Temperatures on Silicon Die -- Summary of Research Results -- Conclusion -- References -- Authors' Biographies.
520 _aIn order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (.
650 0 _aEngineering.
_99405
650 0 _aElectrical engineering.
_985407
650 0 _aElectronic circuits.
_919581
650 0 _aComputers.
_98172
650 0 _aMaterials science.
_95803
650 0 _aSurfaces (Technology).
_910743
650 0 _aThin films.
_97674
650 1 4 _aTechnology and Engineering.
_985409
650 2 4 _aElectrical and Electronic Engineering.
_985410
650 2 4 _aElectronic Circuits and Systems.
_985413
650 2 4 _aComputer Hardware.
_933420
650 2 4 _aMaterials Science.
_95803
650 2 4 _aSurfaces, Interfaces and Thin Film.
_931793
700 1 _aAlam, Shawon.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_985416
700 1 _aAlam, Mohaiminul.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_985417
710 2 _aSpringerLink (Online service)
_985419
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783031008993
776 0 8 _iPrinted edition:
_z9783031031557
830 0 _aSynthesis Lectures on Emerging Engineering Technologies,
_x2381-1439
_985421
856 4 0 _uhttps://doi.org/10.1007/978-3-031-02027-8
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