000 03664nam a22006375i 4500
001 978-3-031-02028-5
003 DE-He213
005 20240730164628.0
007 cr nn 008mamaa
008 220601s2016 sz | s |||| 0|eng d
020 _a9783031020285
_9978-3-031-02028-5
024 7 _a10.1007/978-3-031-02028-5
_2doi
050 4 _aT1-995
072 7 _aTBC
_2bicssc
072 7 _aTEC000000
_2bisacsh
072 7 _aTBC
_2thema
082 0 4 _a620
_223
100 1 _aLiu, Zhaojun.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_985423
245 1 0 _aCompound Semiconductor Materials and Devices
_h[electronic resource] /
_cby Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou.
250 _a1st ed. 2016.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2016.
300 _aVII, 65 p.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSynthesis Lectures on Emerging Engineering Technologies,
_x2381-1439
505 0 _aIntroduction -- GaN-based HEMTs and MOSHEMTs -- III-V Materials and Devices -- Summary -- References -- Authors' Biographies .
520 _aEver since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
650 0 _aEngineering.
_99405
650 0 _aElectrical engineering.
_985426
650 0 _aElectronic circuits.
_919581
650 0 _aComputers.
_98172
650 0 _aMaterials science.
_95803
650 0 _aSurfaces (Technology).
_910743
650 0 _aThin films.
_97674
650 1 4 _aTechnology and Engineering.
_985431
650 2 4 _aElectrical and Electronic Engineering.
_985432
650 2 4 _aElectronic Circuits and Systems.
_985434
650 2 4 _aComputer Hardware.
_933420
650 2 4 _aMaterials Science.
_95803
650 2 4 _aSurfaces, Interfaces and Thin Film.
_931793
700 1 _aHuang, Tongde.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_985436
700 1 _aLi, Qiang.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_985438
700 1 _aLu, Xing.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_985439
700 1 _aZou, Xinbo.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_985440
710 2 _aSpringerLink (Online service)
_985443
773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783031009006
776 0 8 _iPrinted edition:
_z9783031031564
830 0 _aSynthesis Lectures on Emerging Engineering Technologies,
_x2381-1439
_985444
856 4 0 _uhttps://doi.org/10.1007/978-3-031-02028-5
912 _aZDB-2-SXSC
942 _cEBK
999 _c85809
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