000 05265nam a22006015i 4500
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020 _a9783031020346
_9978-3-031-02034-6
024 7 _a10.1007/978-3-031-02034-6
_2doi
050 4 _aT1-995
072 7 _aTBC
_2bicssc
072 7 _aTEC000000
_2bisacsh
072 7 _aTBC
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082 0 4 _a620
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100 1 _aAshraf, Nabil Shovon.
_eauthor.
_4aut
_4http://id.loc.gov/vocabulary/relators/aut
_985496
245 1 0 _aLow Substrate Temperature Modeling Outlook of Scaled n-MOSFET
_h[electronic resource] /
_cby Nabil Shovon Ashraf.
250 _a1st ed. 2018.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2018.
300 _aXI, 77 p.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSynthesis Lectures on Emerging Engineering Technologies,
_x2381-1439
505 0 _aPreface -- Acknowledgments -- Introduction -- Historical Perspectives of Scaled MOSFET Evolution -- Simulation Results of On-State Drain Current and Subthreshold Drain Current at Substrate Temperatures Below 300 K -- Simulation Results on Substrate Mobility and On-Channel Mobility of Conventional Long-Channel ??-MOSFET at Substrate Temperatures 300 K and below -- Simulation Outcomes of Subthreshold Slope Factor or Coefficient for Different Substrate Temperatures at the Vicinity of a Subthreshold Region to Deep Subthreshold Region of a Long-Channel ??-MOSFET -- Review of Scaled Device Architectures for Their Feasibility To Low-Temperature Operation Simulation Perspectives of the Author's Current Research -- Summary of Research Results and Conclusions -- References -- Author's Biography.
520 _aLow substrate/lattice temperature (< 300 K) operation of n-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100-300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 ??m channel length n-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.
650 0 _aEngineering.
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650 0 _aElectrical engineering.
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650 0 _aElectronic circuits.
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650 0 _aComputers.
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650 0 _aMaterials science.
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650 0 _aSurfaces (Technology).
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650 0 _aThin films.
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650 1 4 _aTechnology and Engineering.
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650 2 4 _aElectrical and Electronic Engineering.
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650 2 4 _aElectronic Circuits and Systems.
_985504
650 2 4 _aComputer Hardware.
_933420
650 2 4 _aMaterials Science.
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650 2 4 _aSurfaces, Interfaces and Thin Film.
_931793
710 2 _aSpringerLink (Online service)
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773 0 _tSpringer Nature eBook
776 0 8 _iPrinted edition:
_z9783031001406
776 0 8 _iPrinted edition:
_z9783031009068
776 0 8 _iPrinted edition:
_z9783031031625
830 0 _aSynthesis Lectures on Emerging Engineering Technologies,
_x2381-1439
_985508
856 4 0 _uhttps://doi.org/10.1007/978-3-031-02034-6
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