Maiti, C. K.,
Stress and strain engineering at nanoscale in semiconductor devices / Chinmay K. Maiti. - 1 online resource
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
9781000404937 1000404935 9781003055723 1003055729 9781000404951 1000404951
10.1201/9781003055723 doi
Strains and stresses.
Semiconductors.
Nanoelectronics.
SCIENCE / Physics
TECHNOLOGY / Electricity
TECHNOLOGY / Electronics / Circuits / General
TA405 / .M35 2021 TA417.6
620.1/123
Stress and strain engineering at nanoscale in semiconductor devices / Chinmay K. Maiti. - 1 online resource
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
9781000404937 1000404935 9781003055723 1003055729 9781000404951 1000404951
10.1201/9781003055723 doi
Strains and stresses.
Semiconductors.
Nanoelectronics.
SCIENCE / Physics
TECHNOLOGY / Electricity
TECHNOLOGY / Electronics / Circuits / General
TA405 / .M35 2021 TA417.6
620.1/123