Silicon heterostructure handbook : (Record no. 70599)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 04490cam a2200325Ii 4500 |
| 001 - CONTROL NUMBER | |
| control field | 9781315221137 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 180706s2006 flua ob 001 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781315221137 |
| -- | (e-book : PDF) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781315221137 |
| -- | (e-book) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| ISBN | 9781351828338 |
| -- | (e-book: Mobi) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| -- | (hardback) |
| 082 04 - CLASSIFICATION NUMBER | |
| Call Number | 621.381528 |
| -- | S583 |
| 245 00 - TITLE STATEMENT | |
| Title | Silicon heterostructure handbook : |
| Sub Title | materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy / |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | 1 online resource (1248 pages) |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Remark 2 | chapter Introduction -- chapter The Big Picture -- chapter A Brief History of the Field -- chapter Strained SiGe and Si Epitaxy -- chapter Si-SiGe(C) Epitaxy by RTCVD -- chapter MBE Growth Techniques -- chapter UHV/CVD Growth Techniques -- chapter Defects and Diffusion in SiGe and Strained Si -- chapter Stability Constraints in SiGe Epitaxy -- chapter Electronic Properties of Strained Si/SiGe and Si Cy Alloys -- chapter Carbon Doping of SiGe -- chapter Fabrication of SiGe HBT BiCMOS Technology -- chapter Overview: Fabrication of SiGe HBT BiCMOS Technology -- chapter Device Structures and BiCMOS Integration -- chapter SiGe HBTs on CMOS-Compatible SOI -- chapter Passive Components -- chapter Industry Examples at the State-of-the-Art: IBM -- chapter Industry Examples at the State-of-the-Art: Jazz -- chapter Industry Examples at the State-of-the-Art: Hitachi -- chapter Industry Examples at the State-of-the-Art: Infineon -- chapter Industry Examples at theState-of-the-Art: IHP -- chapter SiGe HBTs -- chapter Overview: SiGe HBTs -- chapter Device Physics -- chapter Second-Order Effects -- chapter Low-Frequency Noise -- chapter Broadband Noise -- chapter Microscopic Noise Simulation -- chapter Linearity -- chapter pnp SiGe HBTs -- chapter Temperature Effects -- chapter Heterostructure FETs -- chapter Overview: Heterostructure FETs -- chapter Biaxial Strained Si CMOS -- chapter Uniaxial Stressed Si MOSFET -- chapter SiGe-Channel HFETs -- chapter Industry Examples at the State-of-the-Art: Intel's 90 nm Logic Technologies -- chapter Other Heterostructure Devices -- chapter Overview: Other Heterostructure Devices -- chapter Resonant Tunneling Devices -- chapter IMPATT Diodes -- chapter Engineered Substrates for Electronic and Optoelectronic Systems -- chapter Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy -- chapter Optoelectronic Components -- chapter Overview: Optoelectronic Components -- chapter Si-SiGe LEDs -- chapter Near-Infrared Detectors -- chapter Si-Based Photonic Transistor Devices for Integrated Optoelectronics -- chapter Si-SiGe Quantum Cascade Emitters -- chapter Measurement and Modeling -- chapter Overview: Measurement and Modeling -- chapter Best-Practice AC Measurement Techniques -- chapter Industrial Application of TCAD for SiGe Development -- chapter Compact Modeling of SiGe HBTs: HICUM -- chapter Compact Modeling of SiGe HBTs: Mextram -- chapter CAD Tools and Design Kits -- chapter Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs -- chapter Transmission Lines on Si -- chapter Improved De-Embedding Techniques -- chapter Circuits and Applications -- chapter Overview: Circuits and Applications -- chapter SiGe as an Enabler for Wireless Communications Systems* -- chapter LNA Optimization Strategies -- chapter Linearization Techniques -- chapter SiGe MMICs -- chapter SiGe Millimeter-Wave ICs -- chapter Wireless Building Blocks Using SiGe HBTs -- chapter Direct Conversion Architectures for SiGe Radios -- chapter RF MEMS Techniques in Si/SiGe -- part Appendices -- chapter Properties of Silicon and Germanium -- chapter The Generalized Moll-Ross Relations -- chapter Integral Charge-Control Relations -- chapter Sample SiGe HBT Compact Model Parameters. |
| 700 1# - AUTHOR 2 | |
| Author 2 | Cressler, John D. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | https://www.taylorfrancis.com/books/9781420026580 |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | eBooks |
| 264 #1 - | |
| -- | Boca Raton, FL : |
| -- | CRC Taylor & Francis, |
| -- | 2006. |
| 336 ## - | |
| -- | text |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | rdacarrier |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Bipolar transistors |
| 650 #0 - SUBJECT ADDED ENTRY--SUBJECT 1 | |
| -- | Silicon |
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