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Silicon heterostructure handbook : materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy / edited byJohn D. Cressler.

Contributor(s): Cressler, John D.
Material type: materialTypeLabelBookPublisher: Boca Raton, FL : CRC Taylor & Francis, 2006Description: 1 online resource (1248 pages).Content type: text Media type: computer Carrier type: online resourceISBN: 9781315221137; 9781315221137; 9781351828338.Subject(s): Bipolar transistors -- Handbooks, manuals, etc | Silicon -- Handbooks, manuals, etcAdditional physical formats: Print version: : No titleDDC classification: 621.381528 Online resources: Click here to view.
Contents:
chapter Introduction -- chapter The Big Picture -- chapter A Brief History of the Field -- chapter Strained SiGe and Si Epitaxy -- chapter Si-SiGe(C) Epitaxy by RTCVD -- chapter MBE Growth Techniques -- chapter UHV/CVD Growth Techniques -- chapter Defects and Diffusion in SiGe and Strained Si -- chapter Stability Constraints in SiGe Epitaxy -- chapter Electronic Properties of Strained Si/SiGe and Si Cy Alloys -- chapter Carbon Doping of SiGe -- chapter Fabrication of SiGe HBT BiCMOS Technology -- chapter Overview: Fabrication of SiGe HBT BiCMOS Technology -- chapter Device Structures and BiCMOS Integration -- chapter SiGe HBTs on CMOS-Compatible SOI -- chapter Passive Components -- chapter Industry Examples at the State-of-the-Art: IBM -- chapter Industry Examples at the State-of-the-Art: Jazz -- chapter Industry Examples at the State-of-the-Art: Hitachi -- chapter Industry Examples at the State-of-the-Art: Infineon -- chapter Industry Examples at theState-of-the-Art: IHP -- chapter SiGe HBTs -- chapter Overview: SiGe HBTs -- chapter Device Physics -- chapter Second-Order Effects -- chapter Low-Frequency Noise -- chapter Broadband Noise -- chapter Microscopic Noise Simulation -- chapter Linearity -- chapter pnp SiGe HBTs -- chapter Temperature Effects -- chapter Heterostructure FETs -- chapter Overview: Heterostructure FETs -- chapter Biaxial Strained Si CMOS -- chapter Uniaxial Stressed Si MOSFET -- chapter SiGe-Channel HFETs -- chapter Industry Examples at the State-of-the-Art: Intel's 90 nm Logic Technologies -- chapter Other Heterostructure Devices -- chapter Overview: Other Heterostructure Devices -- chapter Resonant Tunneling Devices -- chapter IMPATT Diodes -- chapter Engineered Substrates for Electronic and Optoelectronic Systems -- chapter Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy -- chapter Optoelectronic Components -- chapter Overview: Optoelectronic Components -- chapter Si-SiGe LEDs -- chapter Near-Infrared Detectors -- chapter Si-Based Photonic Transistor Devices for Integrated Optoelectronics -- chapter Si-SiGe Quantum Cascade Emitters -- chapter Measurement and Modeling -- chapter Overview: Measurement and Modeling -- chapter Best-Practice AC Measurement Techniques -- chapter Industrial Application of TCAD for SiGe Development -- chapter Compact Modeling of SiGe HBTs: HICUM -- chapter Compact Modeling of SiGe HBTs: Mextram -- chapter CAD Tools and Design Kits -- chapter Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs -- chapter Transmission Lines on Si -- chapter Improved De-Embedding Techniques -- chapter Circuits and Applications -- chapter Overview: Circuits and Applications -- chapter SiGe as an Enabler for Wireless Communications Systems* -- chapter LNA Optimization Strategies -- chapter Linearization Techniques -- chapter SiGe MMICs -- chapter SiGe Millimeter-Wave ICs -- chapter Wireless Building Blocks Using SiGe HBTs -- chapter Direct Conversion Architectures for SiGe Radios -- chapter RF MEMS Techniques in Si/SiGe -- part Appendices -- chapter Properties of Silicon and Germanium -- chapter The Generalized Moll-Ross Relations -- chapter Integral Charge-Control Relations -- chapter Sample SiGe HBT Compact Model Parameters.
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chapter Introduction -- chapter The Big Picture -- chapter A Brief History of the Field -- chapter Strained SiGe and Si Epitaxy -- chapter Si-SiGe(C) Epitaxy by RTCVD -- chapter MBE Growth Techniques -- chapter UHV/CVD Growth Techniques -- chapter Defects and Diffusion in SiGe and Strained Si -- chapter Stability Constraints in SiGe Epitaxy -- chapter Electronic Properties of Strained Si/SiGe and Si Cy Alloys -- chapter Carbon Doping of SiGe -- chapter Fabrication of SiGe HBT BiCMOS Technology -- chapter Overview: Fabrication of SiGe HBT BiCMOS Technology -- chapter Device Structures and BiCMOS Integration -- chapter SiGe HBTs on CMOS-Compatible SOI -- chapter Passive Components -- chapter Industry Examples at the State-of-the-Art: IBM -- chapter Industry Examples at the State-of-the-Art: Jazz -- chapter Industry Examples at the State-of-the-Art: Hitachi -- chapter Industry Examples at the State-of-the-Art: Infineon -- chapter Industry Examples at theState-of-the-Art: IHP -- chapter SiGe HBTs -- chapter Overview: SiGe HBTs -- chapter Device Physics -- chapter Second-Order Effects -- chapter Low-Frequency Noise -- chapter Broadband Noise -- chapter Microscopic Noise Simulation -- chapter Linearity -- chapter pnp SiGe HBTs -- chapter Temperature Effects -- chapter Heterostructure FETs -- chapter Overview: Heterostructure FETs -- chapter Biaxial Strained Si CMOS -- chapter Uniaxial Stressed Si MOSFET -- chapter SiGe-Channel HFETs -- chapter Industry Examples at the State-of-the-Art: Intel's 90 nm Logic Technologies -- chapter Other Heterostructure Devices -- chapter Overview: Other Heterostructure Devices -- chapter Resonant Tunneling Devices -- chapter IMPATT Diodes -- chapter Engineered Substrates for Electronic and Optoelectronic Systems -- chapter Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy -- chapter Optoelectronic Components -- chapter Overview: Optoelectronic Components -- chapter Si-SiGe LEDs -- chapter Near-Infrared Detectors -- chapter Si-Based Photonic Transistor Devices for Integrated Optoelectronics -- chapter Si-SiGe Quantum Cascade Emitters -- chapter Measurement and Modeling -- chapter Overview: Measurement and Modeling -- chapter Best-Practice AC Measurement Techniques -- chapter Industrial Application of TCAD for SiGe Development -- chapter Compact Modeling of SiGe HBTs: HICUM -- chapter Compact Modeling of SiGe HBTs: Mextram -- chapter CAD Tools and Design Kits -- chapter Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs -- chapter Transmission Lines on Si -- chapter Improved De-Embedding Techniques -- chapter Circuits and Applications -- chapter Overview: Circuits and Applications -- chapter SiGe as an Enabler for Wireless Communications Systems* -- chapter LNA Optimization Strategies -- chapter Linearization Techniques -- chapter SiGe MMICs -- chapter SiGe Millimeter-Wave ICs -- chapter Wireless Building Blocks Using SiGe HBTs -- chapter Direct Conversion Architectures for SiGe Radios -- chapter RF MEMS Techniques in Si/SiGe -- part Appendices -- chapter Properties of Silicon and Germanium -- chapter The Generalized Moll-Ross Relations -- chapter Integral Charge-Control Relations -- chapter Sample SiGe HBT Compact Model Parameters.

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