Includes index.

Online resource; title from PDF title page (ScienceDirect, viewed September 27, 2021).

Includes bibliographical references and index.

Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planarization of multiple metal and dielectric materials and layers both at the device and the metallization levels, using different tools and parameters, requiring improvements in the control of topography and defects. This important book offers a systematic review of fundamentals and advances in the area. Part One covers CMP of dielectric and metal films, with chapters focusing on the use of particular techniques and processes, and on CMP of particular various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. Part Two addresses consumables and process control for improved CMP, and includes chapters on the preparation and characterization of slurry, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes, and approaches for defection characterization, mitigation, and reduction.-- Source other than the Library of Congress.

<P><b>Part One -- CMP of dielectric and metal films</b></p> <p>1. Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)</p> <p>2. Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond</p> <p>3. Electrochemical techniques and their applications for CMP of metal films</p> <p>4. Ultra-low-k materials and chemical mechanical planarization (CMP)</p> <p>5. CMP processing of high mobility channel materials -- alternatives to Sis</p> <p>6. Multiscale modeling of chemical mechanical planarization (CMP)</p> <p>7. Polishing of SiC films</p> <p>8. Chemical and physical mechanisms of CMP of gallium nitride</p> <p>9. Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes</p> <p>10. Transient copper removal rate phenomena with implications for polishing mechanisms</p> <p>11. Environmental aspects of planarization processes </p><b> <p>Part Two -- Consumables and process control for improved CMP</p></b> <p>12. Preparation and characterization of slurry for CMP</p> <p>13. Chemical metrology methods for CMP quality</p> <p>14. Diamond disc pad conditioning in chemical mechanical polishing</p> <p>15. Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy</p> <p>16. Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters</p> <p>17. Approaches to defect characterization, mitigation and reduction</p> <p>18. Challenges and solutions for post-CMP cleaning at device and interconnect levels</p> <p>19. Applications of chemical mechanical planarization (CMP) to More than Moore devices</p> <p>20. CMP for phase change materials</p> <p>21. CMP pads and their performance</p> <p>22. Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning</p>