Dopants and defects in semiconductors / Matthew D. McCluskey, Washington State University, Pullman, Washington, USA, Eugene E. Haller, UC Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California, USA.
By: McCluskey, Matthew D [author.]
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Contributor(s): Haller, Eugene E [author.].
Material type: 
BookPublisher: Boca Raton, Fla. : CRC Press, Taylor & Francis Group, [2018]Copyright date: ©2018Edition: Second edition.Description: 1 online resource (xxii, 350 pages).Content type: text Media type: computer Carrier type: online resourceISBN: 9781315269085; 9781351977968.Subject(s): Semiconductor doping | Semiconductors -- DefectsAdditional physical formats: Print version:: No titleDDC classification: 660.2977 Online resources: Click here to view. Semiconductor basics -- Defect classifications -- Interfaces and devices -- Crystal growth and doping -- Electronic properties -- Vibrational properties -- Optical properties -- Thermal properties -- Electrical measurements -- Optical spectroscopy -- Particle-beam methods -- Microscopy and structural characterization.
"This revised edition continues to provide the most complete coverage of the fundamental knowledge of semiconductors, expanding on the latest technology and applications of semiconductors with a new chapter. In addition to inclusion of new chapter problems and worked examples, it delves into solid-state lighting (LEDs and laser diodes). It treats dopants and defects as a unified subject, offering a solid foundation for experimental methods and the theory of defects in semiconductors"-- Provided by publisher.
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